EPJ Web Conf.
Volume 233, 2020Portuguese Condensed Matter Physics National Conference (CMPNC 2019)
|Number of page(s)||6|
|Section||Thin films, Nanostructures, Artificially Structured Materials, Device Physics|
|Published online||16 April 2020|
Ion beam induced current analysis in GaN microwires
1 Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologia (INESC-MN), Rua Alves Redol 9, 1000-029 Lisboa, Portugal
2 IPFN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal
3 C2TN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal
4 CEA INAC-Pheliqs-NPS, Université Grenoble Alpes, Grenoble, France
5 CEA INAC-MEM-NRS, Université Grenoble Alpes, Grenoble, France
6 Instituto de Engenharia de Sistemas e Computadores – Investigação e Desenvolvimento (INESC-ID), Rua Alves Redol 9, 1000-029, Lisboa, Portugal
1 Corresponding author: email@example.com
Published online: 16 April 2020
GaN is a wide bandgap semiconductor which is expected to withstand high radiation doses. Consequently, it is considered a promising material for new generation particle detectors in radiation related applications. We report on the fabrication and electrical characterization under proton irradiation of single microwire sensors based on a back-to-back Schottky contact configuration. The microwires are grown by metal-organic vapor phase epitaxy and processed into sensors by using optical lithography on dispersed wires. We investigate the impact of the contacts and the semiconductor bulk on the ion beam induced current (IBIC) by irradiating specific areas of the sensor and simultaneously measuring the change in conductivity. We observed that the contribution of the excess charge carriers generated in the depletion regions formed at the contact interfaces is of low influence when compared to the excess charge carriers generated in the microwire bulk.
© The Authors, published by EDP Sciences, 2020
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