Issue |
EPJ Web Conf.
Volume 278, 2023
ISRD 17 – International Symposium on Reactor Dosimetry
|
|
---|---|---|
Article Number | 01002 | |
Number of page(s) | 8 | |
Section | Experimental Techniques, Measurements and Monitoring | |
DOI | https://doi.org/10.1051/epjconf/202327801002 | |
Published online | 02 March 2023 |
https://doi.org/10.1051/epjconf/202327801002
Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications
1
Ruddy Consulting, 2162 Country Manor Dr., Mount Pleasant, South Carolina, USA
2
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, USA
* Corresponding author: FrankHRuddy@gmail.com
Published online: 2 March 2023
Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The recent development of SiC detectors where the 10B is incorporated into the detector by ion implantation or diffusion leads to interesting application-specific design possibilities. The design of boron-diffused detectors is discussed as well as ways to optimize their design.
© The Authors, published by EDP Sciences, 2023
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