Study of transverse domain wall dynamics in magnetic nanostrip of different shapes by using spin polarized current pulse

¹ Department of Basic Science and Humanities, Institute of Engineering & Management, Salt Lake Electronics Complex, Sector V, Salt Lake, Kolkata 700091, India
² University of Engineering & Management, University Area, Plot No. III, B/5, New Town Road, Action Area III, Newtown, Kolkata 700160, India

^* Corresponding author email: saswati.barman@iem.edu.in

Published online: 5 May 2025

Abstract

The controlled manipulation of domain walls in spintronic nanostructures is fundamental to advancing energy-efficient, high-speed memory and logic devices. In this study, we investigate the domain wall’s dynamics in a magnetic nanostrip of continuously varying width and a magnetic nanostrip of uniform width under varying spin-polarized current densities. Domain walls are stabilized at distinct positions. Our findings reveal a strong dependence of domain wall mobility on both its initial stabilized position, the applied current, and the structure of the nanostrip. Notably, the domain wall’s direction and the magnitude of the velocity of the domain wall are governed by an interplay between these factors, highlighting the complexity of domain wall dynamics driven by current. The present study reveals that it is possible to manipulate the domain wall velocity by varying the shape of the magnetic nanostrip. In a magnetic nanostrip with varying width, an additional potential barrier is generated, and the velocity and the pinning of the domain wall can be controlled. These insights provide a deeper understanding of domain wall motion driven by spin transfer torque, offering crucial implications for the next-generation spintronic architectures with enhanced control over domain wall transport for non-volatile memory and logic applications.