EPJ Web Conf.
Volume 133, 2017International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors (IC SeNOB 2016)
|Number of page(s)||4|
|Section||MBE growth of II-VI and III-V nanostructures for optoelectronics and biosensors|
|Published online||15 December 2016|
Properties of arsenic–implanted Hg1-xCdxTe MBE films
1 Scientific Research Company “Carat”, 79031 Lviv, Ukraine
2 National Research Tomsk State University, 634050 Tomsk, Russia
3 Hetman Petro Sahaidachny National Army Academy, 79012 Lviv, Ukraine
4 Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, 79060 Lviv, Ukraine
5 Ioffe Institute, 194021 Saint-Petersburg, Russia
6 ITMO University, 197101 Saint-Petersburg, Russia
7 Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
8 Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
9 Faculty of Mathematics and Natural Sciences, University of Rzeszow, 35-310 Rzeszow, Poland
* Corresponding author: email@example.com
Published online: 15 December 2016
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.
© The Authors, published by EDP Sciences, 2017
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