EPJ Web Conf.
Volume 133, 2017International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors (IC SeNOB 2016)
|Number of page(s)||3|
|Section||MBE growth of II-VI and III-V nanostructures for optoelectronics and biosensors|
|Published online||15 December 2016|
Evolution of MBE HgCdTe defect structure studied with ion milling method
Faculty of Mathematics and Natural Sciences, University of Rzeszow, S.Pigonia 1, 35-959 Rzeszow, Poland
* Corresponding author: email@example.com
Published online: 15 December 2016
In this paper, is shown how ion milling can assist in assessing the defect structure of MCT by revealing the residual doping, and establishing the minimum level of donor concentration Nmd, which is needed for obtaining n-regions with a reproducible n value. For this purpose, a study of the electrical properties of ion-milled LWIR n-type MCT films, un-doped and doped with indium with the concentration NIn = 5 × 1014–1017 cm−3 is proposed.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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