| Issue |
EPJ Web Conf.
Volume 133, 2017
International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors (IC SeNOB 2016)
|
|
|---|---|---|
| Article Number | 02001 | |
| Number of page(s) | 4 | |
| Section | Characterisation of nanostructures | |
| DOI | https://doi.org/10.1051/epjconf/201713302001 | |
| Published online | 15 December 2016 | |
https://doi.org/10.1051/epjconf/201713302001
Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
1 Faculty of Mathematics and Natural Sciences, University of Rzeszow, 35-310 Rzeszow, Poland
2 Scientific Research Company “Carat”, 79031 Lviv, Ukraine
3 National Research Tomsk State University, 634050 Tomsk, Russia
4 Siberian Physical-Technical Institute TSU, 634050 Tomsk, Russia
* Corresponding author: i.izhnin@carat.electron.ua
Published online: 15 December 2016
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.
© The Authors, published by EDP Sciences, 2017
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