| Issue |
EPJ Web Conf.
Volume 133, 2017
International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors (IC SeNOB 2016)
|
|
|---|---|---|
| Article Number | 01002 | |
| Number of page(s) | 3 | |
| Section | MBE growth of II-VI and III-V nanostructures for optoelectronics and biosensors | |
| DOI | https://doi.org/10.1051/epjconf/201713301002 | |
| Published online | 15 December 2016 | |
https://doi.org/10.1051/epjconf/201713301002
Dirac’s HdCdTe semimetals grown by MBE technology
1 Centre for Microelectronics and Nanotechnology, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland
2 Institute of Physics, Polish Academy of Sciences, Lotników 32/46 Av., 02-668 Warszawa, Poland
* Corresponding author: grendysa@ur.edu.pl
Published online: 15 December 2016
Peculiarities of the MBE growth technology for the Dirac’s semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Δ1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.
© The Authors, published by EDP Sciences, 2017
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