EPJ Web Conf.
Volume 133, 2017International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors (IC SeNOB 2016)
|Number of page(s)||3|
|Section||MBE growth of II-VI and III-V nanostructures for optoelectronics and biosensors|
|Published online||15 December 2016|
Dirac’s HdCdTe semimetals grown by MBE technology
1 Centre for Microelectronics and Nanotechnology, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland
2 Institute of Physics, Polish Academy of Sciences, Lotników 32/46 Av., 02-668 Warszawa, Poland
* Corresponding author: firstname.lastname@example.org
Published online: 15 December 2016
Peculiarities of the MBE growth technology for the Dirac’s semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Δ1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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