| Issue |
EPJ Web Conf.
Volume 287, 2023
EOS Annual Meeting (EOSAM 2023)
|
|
|---|---|---|
| Article Number | 14009 | |
| Number of page(s) | 2 | |
| Section | Opto-electronic Nanotechnologies and Microsystems (ONM) | |
| DOI | https://doi.org/10.1051/epjconf/202328714009 | |
| Published online | 18 October 2023 | |
https://doi.org/10.1051/epjconf/202328714009
VO2 Tungsten Doped Film IR Perfect Absorber
1 Dipartimento di Scienze di Base ed Applicate per l’Ingegneria, Sapienza Università di Roma, Rome, Italy
2 Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
3 Department of Engineering, University of Palermo, Viale delle Scienze, Ed. 9, Palermo, 90128, Italy
4 Department of Physics and Chemistry "E. Segré", University of Palermo, Viale delle Scienze, ed. 18, Palermo, 90128, Italy
5 Department of Physics and Astronomy, University of Padova, via Marzolo 8, I-35131 Padova, Italy
* Corresponding author: daniele.ceneda@uniroma1.it
Published online: 18 October 2023
We investigated infrared reflectivity of undoped and Tungsten (W) doped Vanadium dioxide (VO2) films at varying temperatures. Undoped VO2 exhibited a clear phase transition at 100°C, achieving near 0% reflectivity, or perfect light absorption. As W doping concentration increased, the phase-transition temperature decreased, maintaining the zero-reflectivity condition. Only a 0.75% W doping enabled room temperature perfect absorption without heating the film.
© The Authors, published by EDP Sciences, 2023
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