Design, Development and Characterization of Indigenously Developed High Temperature Black Body Source for Calibration of ECE Diagnostics

¹ Institute for Plasma Research, Bhat, Gandhinagar, India
² Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai 400094, India
³ L.D. College of Engineering, Ahmedabad, India

^* Corresponding author: abhishek@ipr.res.in

Published online: 15 November 2024

Abstract

The design, development, and characterization of a Silicon Carbide (SiC) based hightemperature black body source at 600 ºC for Electron Cyclotron Emission (ECE) measurements has been done. The design has been optimized for higher emissivity performance in 65-140 GHz frequency range using CST Microwave Studio. The innovative design features a pyramid-based structure, incorporating a heater and emitter surface, integrated with an electrical control system. The improvement in emissivity with variation in pyramid slant angle was analysed. The design was refined to ensure surface temperature consistency within a range of ± 15 ºC and rapid heating, taking less than 60 minutes to reach 600 ºC from room temperature. The developed black body calibration source was thermally characterized using IR camera for different set of temperatures and mean temperature distribution was determined. The microwave characterization of the calibration source has been performed in 65–220 GHz frequency range using Vector Network Analyser (VNA) and reflectivity of more than 20 dB has been obtained. The results highlight the synergy between advanced design methodologies, and precise engineering, leading to the development of an efficient SiC-based black body source. This research work not only contributes significantly to the field of engineering but also paves the way for enhanced accuracy and reliability in ECE measurements.