Characterization of Monolithic Active Pixel Sensors for future collider experiments

¹ Università degli Studi di Bari Aldo Moro, Dipartimento Interateneo di Fisica “M. Merlin”, Bari, Italy
² INFN, sezione di Bari, Italy
³ University of Jammu, India

^* e-mail: angelo.colelli@ba.infn.it

Published online: 10 December 2024

Abstract

In high-energy physics experiments, Monolithic Active Pixel Sensors (MAPS) have become crucial components of vertex and tracking detectors over the past decade due to the integration of readout circuitry with the detection volume in a single chip. The requirement to achieve precise tracking and vertexing capabilities for upgrade of HEP experiments, such as ALICE at LHC and ePIC at EIC, has implied a strong R&D towards an ultra-thin (a few tens of μm), bent, wafer-scale silicon sensors produced with stitching technology. Recent ongoing activities on CMOS silicon sensor testing performed at the INFN Laboratory in Bari will be described. The characterization of analogue silicon pixel sensors of 65 nm CMOS technology using electrical test pulsing and ⁵⁵Fe as a soft X-ray source will be discussed. Furthermore, a study on timing performance will be presented.