| Issue |
EPJ Web Conf.
Volume 325, 2025
International Conference on Advanced Physics for Sustainable Future: Innovations and Solutions (IEMPHYS-24)
|
|
|---|---|---|
| Article Number | 01005 | |
| Number of page(s) | 7 | |
| DOI | https://doi.org/10.1051/epjconf/202532501005 | |
| Published online | 05 May 2025 | |
https://doi.org/10.1051/epjconf/202532501005
Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices
Department of Basic Science & Humanities, University of Engineering & Management, West Bengal, India
* Corresponding author: emonadatta123@gmail.com
Published online: 5 May 2025
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. For this, a numerical device simulator has been applied. Our investigation discloses that JL device shows best performance for both cases.
© The Authors, published by EDP Sciences, 2025
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