Open Access
Issue
EPJ Web Conf.
Volume 325, 2025
International Conference on Advanced Physics for Sustainable Future: Innovations and Solutions (IEMPHYS-24)
Article Number 01005
Number of page(s) 7
DOI https://doi.org/10.1051/epjconf/202532501005
Published online 05 May 2025
  1. K. Boucart, A. M. Ionescu, Double-gate tunnel FET with high-K gate dielectric, IEEE Trans. Elec. Dev. 54, 1725 (2007). 10.1109/TED.2007.899389 [CrossRef] [Google Scholar]
  2. A. Mallik, A. Chattopadhyay, Y. Omura, Gate-on-germanium source tunnel field-effect transistor enabling sub-0.5-V operation. Jpn. J. Appl. Phys. 53, 104201–1 (2014). 10.7567/JJAP.53.104201 [CrossRef] [Google Scholar]
  3. A. Kranti, R. Yan, C.-W. Lee, I. Ferain, R. Yu, N. D. Akhavan, P. Razavi, J.-P. Colinge, Junctionless Nanowire Transistor (JNT) : Properties and design guidelines. Solid State Electron. 65/66, 33 (2011). https://doi.org/10.1016/j.sse.2011.06.004 [CrossRef] [Google Scholar]
  4. S. H. Kim, H. Kam, C. Hu, T.-J. K. Liu, Germanium-source tunnel field effect transistors with record high ION/IOFF. in Proceedings. VLSI Symp. Tech. Dig. (2009). [Google Scholar]
  5. ATLAS User’s Manual, A Device Simulation Software Package, SILVACO Int., Santa Clara, CA, USA, 2015. [Google Scholar]
  6. R. Rios, A. Cappellani, M. Armstrong, A. Budrevich, H. Gomez, R. Pai, N. Rahhalorabi, K. Kuhn, Comparison of Junctionless and Conventional Trigate Transistors With Lg Down to 26 nm. IEEE Elec. Dev. Lett. 32, 1170 (2011). 10.1109/LED.2011.2158978 [CrossRef] [Google Scholar]
  7. Y. Xuan, Y. Q. Wu, T. Shen, T. Yang, P. D. Ye, High performance submicron inversiontype enhancement-mode InGaAs MOSFETs with ALD Al2O3, Hf02 and HfAIO as gate dielectrics. in IEDM Tech. Dig., Dec. (2007). 10.1109/IEDM.2007.4419020 [Google Scholar]
  8. J. Mo, E. Lind, G. Roll, L.-E. Wemersson, Reduction of offstate drain leakage in lnGaAs-based metal-oxide-semiconductor fieldeffect transistors. Appl. Phys. Lett. 105, 033516–1 (2014). https://doi.org/10.1063/1.4891569 [CrossRef] [Google Scholar]
  9. P. Ghosh, S. Haldar, R. S. Gupta, M. Gupta, An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design. IEEE Trans. Elec. Dev. 59, 3263 (2012). 10.1109/TED.2012.2219537 [CrossRef] [Google Scholar]
  10. B. Razavi, RF Microelectronics., (Prentice-Hall, 1998). [Google Scholar]
  11. R. T. Doria, A. Cerdeira, J.-P. Raskin, D. Flandre, M. A. Pavanello, Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectronics Journal. 39, 1663 (2008). https://doi.org/10.1016/j.mejo.2008.02.006 [CrossRef] [Google Scholar]

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